The complete list of papers is available at the URL: (click here)


The list of patents awarded, and of patents transferred to Companies is available at the URL:  (click here)             

PC1. R.H.Horng, D.S. Wuu, Y.C. Lien and W.H. Lan, Low-resistance and high- transparency Ni/Indium tin oxide ohmic contacts to p-type GaN, Appl. Phys. Lett. 79, pp. 2925-2927, 2001. (Cited by 134)

PC2. D.S. Wuu, W.K. Wang, W.C. Shih, R.H.Horng, C.E. Lee, W.Y. Lin, and J.S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates", IEEE Photon. Technol. Lett. 17, 288, 2005. (Cited by 110)

PC3. R.H.Horng, C.C. Yang, J.Y. Wu, S.H. Huang, C.E. Lee, and D.S. Wuu, GaN-based light-emitting diodes with indium-tin-oxide texturing window layers using natural lithography, Appl. Phys. Lett., 86, 221101, 2005. (Cited by 84)

PC4. D.S. Wuu, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin, S.Y. Huang, and C.F. Lin, R.H.Horng, Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template", Appl. Phys. Lett., 89, 161105-161107, 2006. (Cited by 79)

PC5. D.S. Wuu, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin , R.H.Horng, Y.S. Yu, M.H. Pan, "Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes", J. Electrochem. Soc. 153, pp. G765-G770, 2006. (Cited by 77)

PC6. W. K. Wang, D. S. Wuu,  S. H. Lin, P. Han, R.H.Horng, T. C. Hsu, D. T. C. Huo, M. J. Jou, Y. H. Yu, A. K. Lin, Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates IEEE J. Quantum Electronics, 41, pp. 1403-1409, 2005. (Cited by 60)

PC7. R.H.Horng, D. S. Wuu, S.C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, PH, K.C. Lin, AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding, Appl. Phys. Lett. 75, pp. 3054-3056, 1999. (Cited by 59)

PC8. K.H. Chang, K.C. Lin, R.H. Horng, M.F. Huang, S.C.Wei: US Patent 6,287,882 B1, Sept.2001 awarded to Visual Photonics Epitaxy Co. ltd. (Cited by 55)

PC9. D.S. Wuu, K.F. Pan, S.H. Huang, C.E. Lee, W.K. Wang, S.C. Hsu, Y.Y. Su, S.Y. Huang, R.H. Horng, High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques, IEEE Photonics Technology Letters,17, pp1809-1811, 2005. (Cited by 53)

PC10. X. Zheng, R.H.Horng, S.T. Lin, D.S. Wuu, M.T. Chu, W.Y. Liao, M.H. Wu, High-quality InGaN/GaN heterojunctions and their photovoltaic effects, Appl. Phys Lett. 93, 261108, 2008 (Cited by 51)

PC11. R.H. Horng, D. S. Wuu, S.C. Wei, S.C. Huang, H.Chang, P.H.Liu, S.H. Lin  "AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology", Appl. Phys. Lett. 75, pp. 154-156, 1999 (Cited by 45)

PC12. D.S. Wuu, W.C. Lo, L.S. Chang, R.H. Horng, Properties of SiO2-like barrier layers on polyethersulfone substrates by low-temperature plasma-enhanced chemical vapor deposition, Thin Solid Films 468, pp105-108, 2004. (Cited by 41)

PC13 R.H. Horng, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin, S.Y. Huang, C.F. Lin, D.S. Wuu, Growth and Characterization of 380-nm InGaN/AlGaN LEDs Grown on Patterned Sapphire Substrates, J. Cryst. Growth 298, pp. 219-222, 2007. (Cited by 37)

PC14 M.K. Lee, R.H. Horng, L. C. Haung,Disorder Order-disorder Ga0.5In0.5P Visible Light-Emitting-Diodes, J. Appl. Phys. 72, pp. 5420-5422, 1992. (Cited by 37)

PC15 K.H. Chang, K.C. Lin, R.H.Horng, M.F. Huang, D.S. Wuu, S.C. Wei, L.C. Chen: US Patent 6,258,699 B1 (Cited by 35)

PC16 R-H Horng, D-S Wuu, L-H Wu, M-K Lee, Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films, Thin Solid Films 373, pp. 231-234, 2000. (Cited by 32)

PC17 D-S Wuu, W-C Lo, C-C Chiang, H-B Lin, L-S Chang, R-H Horng, C-L Huang, Y-J Gao, Plasma-Deposited Silicon Oxide Barrier Films on Polyethersulfone Substrates Temperature and Thickness Effects, Surf. Coat. Technol. 22, pp. 253-259 (2005) (Cited by 31)

PC18 D-S Wuu, C-C Chan, R-H Horng, Y-S Lee,Plasma-Deposited Amorphous Silicon Carbide Films for Micromachined Fluidic Channels, Appl. Surf. Sci. 145, pp. 708-712 (1999). (Cited by 30)

PC19 T-N Chen, D-S Wuu, C-C Wu, C-C Chiang, Y-P Chen, and R-H Horng, High-Performance Transparent Barrier Films of SiOx/SiNx Stacks on Flexible Polymer Substrates, J. Electrochem. Soc., 153, pp. F244-F248 , 2006. (Cited by 29)

PC20 R-H Horng, D-S Wuu, J. W. Yu, C-Y Kung, Effects of Rapid Thermal Process on Structural and Electrical Characteristics of Y2O3 Thin Films by rf-Magnetron Sputtering, Thin Solid Films 289, pp. 234-237 (1996). (Cited by 29)

PC21 R-H Horng, S-H Huang, C-C Yang, D-S Wuu, Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography, IEEE J. Sel. Topics Quant. Electr. 12, pp.1196-1201 (2006). (Cited by 25)

PC22 D-S Wuu, W-C Lo, C-C Chiang, H-B Lin, L-S Chang, R-H Horng, C-L Huang, Y-J Gao, Water and Oxygen Permeation of Silicon Nitride Films Prepared by Plasma Enhanced Chemical Vapor Deposition, Surf. Coat. Technol.  198, pp. 114-117 (2005). (Cited by 22)